Student’s Name |
Graduation Year |
Degree |
Abstracts |
Research Name |
Dyskin Aleksey |
2019 |
PhD |
Abstracts |
Synchronous Detection for Ultra-Wide Band Systems Operating at E-Band Carrier Frequencies with High Speed Data Rates |
Mehari Shlomo |
2016 |
PhD |
Abstracts |
A Study of Gate Leakage Current and Electron Trapping Effects in AlGaN/GaN-Based Heterostructure Field Effect Transistors |
Bloch Eli |
2015 |
PhD |
Abstracts |
Millimeter-Wave CMOS and InP Front-End ICs for Optical and Wireless High Data-Rate Communication |
Yalon Eilam |
2015 |
PhD |
Abstracts |
Novel Bipolar Transistor Structures and their Applications |
Calahorra Yonatan |
2015 |
PhD |
Abstracts |
III-V Nanowires: Growth, Properties and Devices |
Kraus Shraga |
2012 |
PhD |
Abstracts |
Fast Delta-Sigma Analog-to-Digital Converter Based on InP/GaInAs HBTs |
Cohen Emanuel |
2012 |
PhD |
Abstracts |
Millimeter Wave Circuits and Phased Array Systems in Deep Sub Micron CMOS Process |
Cohen-Elias Doron |
2011 |
PhD |
Abstracts |
Ultra Small Fast Indium Phosphide Based Transistors |
Sheinman Benjamin |
2005 |
PhD |
Abstracts |
Modeling and Performance of Ultrafast InP Based Heterojunction Bipolar Transistors and Circuits |
Raz Tal |
2004 |
PhD |
Abstracts |
Self Assembled Quantum Dots Grown on GaAs and InP Substrates by Metal Organic Molecular Beam Epitaxy |
Lasri Jacob )Kobi( |
2002 |
PhD |
Abstracts |
Mutual Control of Millimeter-Wave Generators and Diode Lasers via Optoelectronic Mixing in Photo-HBT’s |
Shamir Nachum |
1999 |
PhD |
|
Heterojunction Bipolar Transistor Based Optical Light Modulators: Implementation and Physical Analysis |
Betser Yoram |
1998 |
PhD |
|
Physics and Optical Control of InP/GaInAs Heterostructure Bipolar Transistors for Microwave Applications |
Cohen Guy |
1998 |
PhD |
|
INP Electronic Devices Based on Tunneling and Strained Gainp Layers |
Zelikson Michael |
1996 |
PhD |
|
Study of Modulation Properties of Optical Constants in A-Si:H Waveguide Structures |
Kelrich Alexander |
2019 |
PhD |
Abstracts |
Growth and Characterization of InP Nanowires and Nanostructures Using the Selective Area Vapor-Liquid-Solid Method |
Krylov Igor |
2017 |
PhD |
Abstracts |
Nano-Scale Atomic Layer Deposited Dielectrics for InGaAs Metal-Insulator-Semiconductor Field-Effect- Transistors |
Greenberg Ya’akov |
2015 |
PhD |
Abstracts |
Epitaxial Growth of Semiconductor Nanowires |
Malkes Elena |
2007 |
MSc |
Abstracts |
Passivation of III-V Devices by Organic Self-Assembles Monolayers (SAMs) |
Dassa Oded |
2004 |
MSc |
Abstracts |
The Effect of the Lattice Planes in III-V Semiconductors on their Passivation by Organic Self Assembled Monolayers |
Shvartzman Mark |
2002 |
MSc |
Abstracts |
Passivation of InP and InP-Based Devices by Organic Self- Assembled Monolayers |
Nasser Karam |
2019 |
MSc |
Abstracts |
Integration of Device and Circuit Simulation Programs of GaN Transistors |
Osman Bilal |
2018 |
MSc |
Abstracts |
Study of Electron Trapping Effects in Gallium Nitride Transistors |
Liraz-Lidji Ron |
2018 |
MSc |
Abstracts |
Mixed Ionic Electronic Conductor Model of the Resistive Switching Effect |
Shriki Avi |
2017 |
MSc |
Abstracts |
A Study of Ohmic Contacts to Gallium Nitride-Based High Electron Mobility Transistors(HEMTs) |
Awad Morad |
2015 |
MSc |
Abstracts |
An Analytical Model for the Silicon Limit of Single and Double RESURF Drift Layers in Integrated LDMOS Devices |
Dyskin Aleksey |
2013 |
MSc |
Abstracts |
A Millimeter Wave Broadband, Low Noise and High Gain Integrated Receiver Front-end Based on GaAs Metamorphic HEMTs |
Mehari Shlomo |
2012 |
MSc |
Abstracts |
Ni-InGaAs Alloy as Silicide-Like Metallization of InGaAs |
Sulkin Alex |
2012 |
MSc |
Abstracts |
A Single-Ended Unilateralization and Neutralization Technique for Microwave/mm-Wave Integrated Amplifiers |
Halevy Ran |
2011 |
MSc |
Abstracts |
A Method for Measuring the Specific Interface Resistivity between Two Semiconductor Layers and its Application to a Heavily Doped N-Type InP/GalnAs Heterostructure |
Bloch Eli |
2011 |
MSc |
Abstracts |
An InP Based Broadband Differential Transimpedance Amplifier for 40Gbs DPSK Photoreceivers |
Magriss-Abudi Tsufit |
2009 |
MSc |
Abstracts |
InP HBT Voltage Controlled Oscillator |
Sayag Avraham |
2009 |
MSc |
Abstracts |
High Frequency CMOS Low Noise Amplifier Design Methodology using Slow Wave Transmission Lines |
Burdo Gennady |
2008 |
MSc |
Abstracts |
Linear Broadband Amplifier in InP HBT Technology |
Kraus Shraga |
2006 |
MSc |
Abstracts |
An InP-Based Optoelectronic Integrated Circuit for Optical Communication Systems |
Cohen-Elias Doron |
2006 |
MSc |
Abstracts |
Control of Current Limiting Phenomena in Bipolar Transistor by a Non Uniform Doping Profile in the Collector |
Ramon Dan |
2006 |
MSc |
Abstracts |
Tunneling through the Base Collector Energy Barrier in Abrupt InP/GaInAs/InP Double Heterojunction Bipolar Transistors |
Shuall Nimrod |
2006 |
MSc |
Abstracts |
Optical and Electrical Characterization of In(Ga)As/InP Quantum Dots Layers and IR Devices |
Zohar Gal |
2004 |
MSc |
Abstracts |
Study of Electron Transport in the Base of InP/GaInAs Heterostructure Bipolar Transistors |
Cohen Emanuel |
2003 |
MSc |
Abstracts |
Design of Wide-band Distributed Amplifier Based on InP/GaInAs Hetrojunction Bipolar Transistors |
Vered Yishai |
2003 |
MSc |
Abstracts |
InP Based High Frequency Bipolar Hetrojunction Transistor (HBT) |
Fainleib Svetlana |
2000 |
MSc |
|
Fabrication and Characterization of Ingaasp Quantum Well Lasers Grown by Metal Organic Molecular Beam Epitaxy |
Proudnikov Ilia |
2000 |
MSc |
|
Fabrication Technology of Heterojunction Bipolar Transistor |
Volfman Igor |
1997 |
MSc |
|
Microwave Effects on the Photoluminescence of Quantum Wells |
Spiegel Solon |
1997 |
MSc |
|
Characterization and Modeling of Inp/gainas Heterojunction Bipolar Transistors |
Betser Yoram |
1995 |
MSc |
|
Electron Transport in Heterojunction Bipolar Transistors |
Ber Emanuel |
2019 |
MSc |
Abstracts |
Interface Traps Characterization in GaN Devices using UV Assisted Gated Van Der Pauw Measurements |