PhD and MSc Theses
PhD and MSc Theses, since 1988
Student’s Name |
Graduation Year |
Degree |
Abstracts |
Research Name |
Gantz Liron |
2018 |
PhD |
Abstracts |
Quantum Bits Utilizing the Quantum Dot Confined Bright and Dark Excitons |
Vardi Alon |
2011 |
PhD |
Abstracts |
Unipolar Electro-Optical Devices Based on Nanometric Structures in the III-N Material System |
Albo Asaf |
2011 |
PhD |
Abstracts |
GaInAsN/(A1)GaAs Quantum-Well-Based Structures: Growth, Physical Properties and IR-Devices |
Raz Tal |
2004 |
PhD |
Abstracts |
Self Assembled Quantum Dots Grown on GaAs and InP Substrates by Metal Organic Molecular Beam Epitaxy |
Katz Oded |
2005 |
PhD |
Abstracts |
Nitride Based Heterostructure Field-Effect Transistors for High-Frequency and High-Power Applications |
Maimon Shimon |
1998 |
PhD |
|
Quantum Well Infrared Photodetectors: Characterization, Analysis, and Implementation |
Fenigstein Amos |
1996 |
PhD |
|
Optical Intersubband Transitions in Type II Quantum Structures |
Berkowicz Eyal |
2002 |
PhD |
Abstracts |
Optical Properties of Nitride Quantum Structures |
Yokev Idan |
2021 |
MSc |
Abstracts |
Toward GaN on Si based Monolithic Integrated Inter-Subband IR Optoelectronics |
Dror Ben |
2019 |
MSc |
Abstracts |
Intersubband Infrared Optoelectronic Devices in Gallium-Nitride on Silicon |
Katz Matias |
2019 |
MSc |
Abstracts |
III-Nitrides Intersubband Based Quantum Cascade Detectors with Enhanced Performance by Optical Nano-Structur |
Reizer Yulia |
2016 |
MSc |
Abstracts |
Deterministic Positioning of a Single Quantum dot in a Pillar Microcavity |
Gross Elad |
2013 |
MSc |
Abstracts |
Heterostructures Electro-Optics Properties of the III-Nitrides Material System |
Shirak Oren |
2008 |
MSc |
Abstracts |
Silicon Nanowire Field Effect Transistors |
Zaknoon Bashir |
2008 |
MSc |
Abstracts |
Investigation of Silicon Nanostructures by Scanning Probe Microscopy and Electron Spectroscopy |
Segal Hagay |
2008 |
MSc |
Abstracts |
Light Transmission through 2D Structured Subwavelength Hole Arrays |
Girgel Michael |
2006 |
MSc |
Abstracts |
Effect of Material Properties on Performance in Hg1-xCdxTe based PV Infrared Photo-detectors |
Vardi Alon |
2006 |
MSc |
Abstracts |
Material and Device Characterization of GaN/AlN Quantum Dots |
Shuall Nimrod |
2006 |
MSc |
Abstracts |
Optical and Electrical Characterization of In(Ga)As/InP Quantum Dots Layers and IR Devices |
Horn Adi |
2004 |
MSc |
Abstracts |
Design and Implementation of Heterostructure Field Effect Transistor on AlGaN/GaN |
Katz Oded |
2001 |
MSc |
|
The Implementation and Characterization of Schottky UV Photodetectors Based on Gallium Nitride and Aluminum Gallium Nitride |
Luinetsky Svetlana |
2001 |
MSc |
|
Characterization of High Speed GaAs Based Pseudomorphic Heterostructure Field Effect Transistor (HFET) with Strained InGaAs Channel |
Gero Aharon |
2000 |
MSc |
|
Electronic, Optical and Electrical Properties of Quantum Well Infrared Photodetectors |
Guskov Juri |
2000 |
MSc |
|
The Effect of Strain in Inp/ingaas Qwip on the Detector Operating Wavelength |
Leiba Yigal |
1997 |
MSc |
|
Investigation of Electron Transport Parallel to the Layers Defining Gaas/algaas Quantum Structures Using Intersubband Transitions |
Shemesh Yair |
1997 |
MSc |
|
Delta-Doped Fet Devices for Microwave Monolithic Integrated Circuits |
Veinger Dmitry |
1996 |
MSc |
|
Inp/ingaasp Epitaxial Growth in Mocvd System for Laser Application in Optical Communication. Comparison Between Selective and Regular Growth Methods. |
Brandl Armona |
1994 |
MSc |
|
Gaas/ Gaalas Quantum Well Ir Photo Detectors-Asymetric Struc |
Zipper Eliav |
1993 |
MSc |
|
Inp Passivation and Misfet Devices |
Zachman Susan |
1992 |
MSc |
|
Characterization of Deep Levels in Hgodte Junctions |
Abraham David |
1990 |
MSc |
|
Relations Between Model Parameters of Hemt Transistor and |
Groshaus Javier |
2001 |
MSc |
|
Light Emission Mechanisms in InGaN MQW Laser Diodes |